| 频率(GHz) |
功率(dBm) |
增益(dB) |
NF/PAE |
+V |
IQ(mA) |
| 13 -17 |
33 |
32 |
- |
7 |
680 |
- 33 dBm midband Pout
- 32 dB nominal gain
- 10 dB typical return loss
- Built-in directional power detector with reference
- 0. 50 um pHEMT technology
- Bias conditions: 7 V, 680 mA
- Chip dimensions: 2.5 x 1.4 x 0.1 mm (98 x 55 x 4 mils)
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