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产品信息
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AH322
2 W, 高线性 InGaP HBT 放大器 |
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| 详细资料 |
质量和可靠性 |
封装信息 (
PDF ,DWG )
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| 型号 |
BOM |
Gerber文件 |
| AH322-S8PCB900 |
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| AH322-S8PCB1960 |
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| AH322-S8PCB2140 |
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| 频率(GHz) |
增益(dB) |
P1dB (dBm) |
OIP3 (dBm) |
NF (dB) |
Vdd (V) |
Idd (mA) |
封装信息 |
| 0.4-2.7GHz |
13.5dB |
33.5dBm |
52 |
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500mA |
SOIC-8 |
Features
- 400 – 2700 MHz
- +33.4 dBm P1dB
- +50 dBm Output IP3
- 13.5 dB Gain @ 2140 MHz
- 500 mA Quiescent Current
- +5 V Single Supply
- MTTF > 100 Years
- Lead-free/RoHS-compliant
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Typical Applications
- Mobile Infrastructure
- Final stage amplifiers for Repeaters
- High Power Amplifiers
- LTE / WCDMA / EDGE / CDMA
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| General Description
The AH322 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +50 OIP3 and +33.4 dBm of compressed 1dB power. It is housed in a leadfree/ RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The AH322 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. The AH322 is ideal for the final stage of small repeaters or as driver stages for high power amplifiers. In addition, the amplifier can be used for a wide variety of other applications within the 400 to 2700 MHz frequency band.
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